Oxidation and etching of hydrogenated amorphous silicon; An in situ ellipsometry study

R. W. Collins; Ce Huang; H. Windischmann

doi:10.1016/0165-1633(85)90053-x

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Oxidation and etching of hydrogenated amorphous silicon; An in situ ellipsometry study

R. W. Collins Ce Huang H. Windischmann

Year: 1985 Journal: Solar Energy Materials Vol: 12 (4)Pages: 289-298 Publisher: Elsevier BV

DOI: 10.1016/0165-1633(85)90053-x

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Keywords:

Etching (microfabrication) Ellipsometry Materials science Amorphous solid Microstructure Silicon Analytical Chemistry (journal) Layer (electronics) Isotropic etching In situ Amorphous silicon Thin film Chemistry Crystallography Nanotechnology Optoelectronics Composite material Crystalline silicon

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Oxidation and etching of hydrogenated amorphous silicon; An in situ ellipsometry study

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