Infrared ellipsometry study of the oxidation mechanisms of hydrogenated amorphous silicon

N. Blayo; B. Drévillon

doi:10.1016/0039-6028(92)90016-y

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Infrared ellipsometry study of the oxidation mechanisms of hydrogenated amorphous silicon

N. Blayo B. Drévillon

Year: 1992 Journal: Surface Science Vol: 260 (1-3)Pages: 37-43 Publisher: Elsevier BV

DOI: 10.1016/0039-6028(92)90016-y

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Keywords:

Ellipsometry Infrared Amorphous silicon Silicon Materials science Infrared spectroscopy Analytical Chemistry (journal) Chemistry Nanotechnology Optoelectronics Optics Thin film Crystalline silicon Physics Organic chemistry

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Cultural Heritage Materials Analysis

Social Sciences → Arts and Humanities → Archeology

Infrared ellipsometry study of the oxidation mechanisms of hydrogenated amorphous silicon

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