Growth kinetics of GaN thin films grown by OMVPE using single source precursors

Roland A. Fischer; A. Wohlfart; Anjana Devi; W. Rogge

doi:10.1557/s109257830000421x

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Growth kinetics of GaN thin films grown by OMVPE using single source precursors

Roland A. Fischer A. Wohlfart Anjana Devi W. Rogge

Year: 2000 Journal: MRS Internet Journal of Nitride Semiconductor Research Vol: 5 (S1)Pages: 152-158 Publisher: Cambridge University Press

DOI: 10.1557/s109257830000421x

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Keywords:

Materials science X-ray photoelectron spectroscopy Epitaxy Full width at half maximum Thin film Luminescence Substrate (aquarium) Analytical Chemistry (journal) Stoichiometry Kinetics Atmospheric temperature range Semiconductor Optoelectronics Chemical engineering Nanotechnology Layer (electronics) Chemistry Physical chemistry

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Growth kinetics of GaN thin films grown by OMVPE using single source precursors

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