Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors

Roland A. Fischer; A. Wohlfart; Anjana Devi; W. Rogge

doi:10.1557/proc-595-f99w3.18

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Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors

Roland A. Fischer A. Wohlfart Anjana Devi W. Rogge

Year: 1999 Journal: MRS Proceedings Vol: 595 Publisher: Cambridge University Press

DOI: 10.1557/proc-595-f99w3.18

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Keywords:

Materials science X-ray photoelectron spectroscopy Epitaxy Substrate (aquarium) Luminescence Thin film Full width at half maximum Analytical Chemistry (journal) Stoichiometry Kinetics Gallium Optoelectronics Chemical engineering Nanotechnology Layer (electronics) Metallurgy Physical chemistry Chemistry

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors

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