CdSe Thin Films Grown by MOCVD Method Using New Single-source Precursors

Dong Yock Chae

doi:10.5012/bkcs.2006.27.5.762

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CdSe Thin Films Grown by MOCVD Method Using New Single-source Precursors

Dong Yock Chae

Year: 2006 Journal: Bulletin of the Korean Chemical Society Vol: 27 (5)Pages: 762-764 Publisher: Wiley

DOI: 10.5012/bkcs.2006.27.5.762

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Abstract

E-mail: [email protected] September 5 20, 05Key Words : Cadmium selenide C, dSe Dis, elenocarbamate, MOCVD Sing, le-source precursorCdSe is one of the well known II-VI semiconductormaterials having a band gap of 1.74 eV, suitable for photo-voltaic cell, light emitting diodes, and thin film transistors(TFTs).

Keywords:

Metalorganic vapour phase epitaxy Materials science Optoelectronics Thin film Nanotechnology Chemistry Chemical engineering Epitaxy Layer (electronics) Engineering

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Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

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CdSe Thin Films Grown by MOCVD Method Using New Single-source Precursors

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