JOURNAL ARTICLE
Transient Annealing of Ion Implanted Gallium Arsenide
Year: 1982 Journal: MRS Proceedings Vol: 13 Publisher: Cambridge University Press
Keywords:
Materials science Annealing (glass) Dopant Gallium arsenide Ion implantation Ion Dissociation (chemistry) Redistribution (election) Optoelectronics Solid solubility Doping Metallurgy Solid solution Physical chemistry Chemistry
Metrics
9
Cited By
1.37
FWCI (Field Weighted Citation Impact)
28
Refs
0.84
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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