Ir Radiation Transient Annealing of Silicon Implanted Si Gallium Arsenide

A. Ezis; Y. K. Yeo; Y. S. Park

doi:10.1557/proc-23-681

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JOURNAL ARTICLE

Ir Radiation Transient Annealing of Silicon Implanted Si Gallium Arsenide

A. Ezis Y. K. Yeo Y. S. Park

Year: 1983 Journal: MRS Proceedings Vol: 23 Publisher: Cambridge University Press

DOI: 10.1557/proc-23-681

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Keywords:

Materials science Van der Pauw method Optoelectronics Annealing (glass) Transconductance Wafer Electron mobility Silicon Hall effect Gallium arsenide Ion implantation Analytical Chemistry (journal) Ion Electrical resistivity and conductivity Transistor Composite material Electrical engineering

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Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Ir Radiation Transient Annealing of Silicon Implanted Si Gallium Arsenide

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