JOURNAL ARTICLE
Capless annealing of silicon implanted gallium arsenide
Year: 1983 Journal: Solid-State Electronics Vol: 26 (4)Pages: 313-317 Publisher: Elsevier BV
Keywords:
Annealing (glass) Materials science Silicon Gallium arsenide Ion implantation Optoelectronics Arsine Hall effect Ion Electron mobility Electrical resistivity and conductivity Metallurgy Chemistry Electrical engineering
Metrics
13
Cited By
5.80
FWCI (Field Weighted Citation Impact)
23
Refs
0.97
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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