Capless Rapid Thermal Annealing of Silicon Ion Implanted Gallium Arsenide

Abstract

Argon arc lamp rapid thermal annealing of ion implanted gallium arsenide (GaAs) has been studied. Silicon ion was implanted into semi-insulating GaAs at 120 keV with a dose of 3×10 12 cm -2 . Capless annealing was performed by dc argon arc lamp at temperatures of 850-1000°C. Carrier concentration profiles are abrupt at the interface and fit well with the LSS profile. Abruptness of the profile was 0.78 at 850°C for 15 s and at 1000°C for 2 s, where the abruptness was defined as 1.0 in LSS theoretical profile and a lower value shows a gentler profile. This value is much greater than that by tungsten-halogen lamp rapid thermal annealing of 0.36 and furnace annealing of 0.34. This annealing technique is useful for the formation of a shallow channel layer with abrupt·carrier concentration profile for GaAs MESFET's.