Capless Annealing of Ion‐Implanted Gallium Arsenide by a Melt‐Controlled Ambient Technique

Abstract

A novel capless technique for the annealing of ion‐implanted is described. The apparatus employed consists of a large solution of in Ga, into which is immersed a suitable sample holder containing the water to be annealed. Se‐implanted layers annealed using this technique behave electrically in the manner expected for well‐annealed group VI dopant implants into . The electrical activity of implanted Si, however, decreases with increasing anneal temperature in the range from 800° to 900°C. Possible explanations for the behavior of the implanted Si are discussed.