Transient annealing of selenium-implanted gallium arsenide using a graphite strip heater

Abstract

A graphite strip heater has been used for transient annealing, at temperatures of 900–1140 °C, of GaAs wafers implanted at 300 °C with a 1×1015 cm−2 dose of 400-keV Se+ ions. The electrical activation of the implant produced by annealing at 1140 °C for 10 s yields a sheet resistivity of 25 Ω/⧠ and sheet carrier concentration of 1.8×1014 cm−2, compared with values of 35 Ω/⧠ and 1.1×1014 cm−2 obtained by conventional furnace annealing at 950 °C for 30 min.