Proximity Annealing of Sulfur-Implanted Gallium Arsenide Using a Strip Heater

Abstract

A graphite strip heater has been employed for rapid (∼30 s) thermal annealing (RTA), at temperatures between 850 and 1150°C, of Cr-doped GaAs implanted with 120 keV 32 S + with doses between 10 13 and 10 15 cm -2 . In order to minimize the incongruent evaporation of As, proximity anneals were employed by protecting the implanted samples with GaAs cover pieces. RTA yields electrical activation and donor mobilities better than or comparable to furnace annealing, with less redistribution of the implanted S and background Cr.