Ion beam mixing for ohmic contact formation ton-Type GaAs

Jie Zhao; Dylan Thompson

doi:10.1007/bf02652186

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JOURNAL ARTICLE

Ion beam mixing for ohmic contact formation ton-Type GaAs

Jie Zhao Dylan Thompson

Year: 1988 Journal: Journal of Electronic Materials Vol: 17 (3)Pages: 249-254 Publisher: Springer Science+Business Media

DOI: 10.1007/bf02652186

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Keywords:

Ohmic contact Annealing (glass) Ion Materials science Auger Analytical Chemistry (journal) Ion beam mixing Contact resistance Ion beam Doping Ion implantation Chemistry Ion beam deposition Metallurgy Atomic physics Optoelectronics Nanotechnology

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Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ion beam mixing for ohmic contact formation ton-Type GaAs

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