Formation of GaAs Ohmic Contacts by Using Ion Beam Mixing

Shinya Furukawa; Takashi Asano; T. Fukada; Hiroshi Ishiwara; Kazuo Tsutsui

doi:10.1557/proc-54-207

ScienceGate Book Chapters

JOURNAL ARTICLE

Formation of GaAs Ohmic Contacts by Using Ion Beam Mixing

Shinya Furukawa Takashi Asano T. Fukada Hiroshi Ishiwara Kazuo Tsutsui

Year: 1985 Journal: MRS Proceedings Vol: 54 Publisher: Cambridge University Press

DOI: 10.1557/proc-54-207

Get Full-Text PDF Get Analytical Report

Keywords:

Ohmic contact Materials science Annealing (glass) Ion beam mixing Ion implantation Schottky diode Doping Optoelectronics Ion Semiconductor Schottky barrier Molecular beam epitaxy Epitaxy Ion beam Analytical Chemistry (journal) Nanotechnology Ion beam deposition Layer (electronics) Metallurgy Chemistry Diode

Metrics

Cited By

0.22

FWCI (Field Weighted Citation Impact)

Refs

0.52

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Formation of GaAs Ohmic Contacts by Using Ion Beam Mixing

Metrics

Topics

Related Documents

Formation of Ohmic contacts to n-GaAs using ion beam mixing of Tellurium

Ion beam mixing of Pt/GaAs and formation of ohmic contacts

Stable ohmic contacts to n-GaAs using ion-beam mixing

Formation of ohmic contacts to n-GaAs by ion beam mixing and annealing

Ohmic contacts to GaAs lasers using ion-beam technology