Stable ohmic contacts to n-GaAs using ion-beam mixing

S. R. Smith; J. S. Solomon

doi:10.1016/0167-577x(85)90025-4

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Stable ohmic contacts to n-GaAs using ion-beam mixing

S. R. Smith J. S. Solomon

Year: 1985 Journal: Materials Letters Vol: 3 (7-8)Pages: 294-298 Publisher: Elsevier BV

DOI: 10.1016/0167-577x(85)90025-4

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Keywords:

Ohmic contact Materials science Eutectic system Coalescence (physics) Ion beam mixing Alloy Ion Thin film Layer (electronics) Optoelectronics Ion beam Analytical Chemistry (journal) Metallurgy Composite material Nanotechnology Ion beam deposition

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Stable ohmic contacts to n-GaAs using ion-beam mixing

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