Formation of Ohmic contacts to n-GaAs using ion beam mixing of Tellurium

K. Prasad

doi:10.1007/bf00324333

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Formation of Ohmic contacts to n-GaAs using ion beam mixing of Tellurium

K. Prasad

Year: 1992 Journal: Applied Physics A Vol: 54 (6)Pages: 523-526 Publisher: Springer Science+Business Media

DOI: 10.1007/bf00324333

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Keywords:

Ohmic contact Materials science Substrate (aquarium) Ion Ion beam mixing Analytical Chemistry (journal) Diffusion Ion beam Contact resistance Atmospheric temperature range Range (aeronautics) Layer (electronics) Doping Atomic physics Ion beam deposition Optoelectronics Chemistry Nanotechnology Composite material Thermodynamics

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Formation of Ohmic contacts to n-GaAs using ion beam mixing of Tellurium

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