Ion beam mixing for ohmic contact formation to n-type GaAs

Jie Zhao; DA Thompson

doi:10.1016/0042-207x(89)90226-1

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Ion beam mixing for ohmic contact formation to n-type GaAs

Jie Zhao DA Thompson

Year: 1989 Journal: Vacuum Vol: 39 (2-4)Pages: 303-305 Publisher: Elsevier BV

DOI: 10.1016/0042-207x(89)90226-1

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Keywords:

Ohmic contact Ion Annealing (glass) Ion beam mixing Materials science Ion implantation Ion beam Evaporation Contact resistance Analytical Chemistry (journal) Irradiation Atmospheric temperature range Ion beam deposition Chemistry Nanotechnology Composite material

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Ion beam mixing for ohmic contact formation to n-type GaAs

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