Ion beam mixing of Pt/GaAs and formation of ohmic contacts

Abstract

Alloying was observed in the Pt/GaAs system, induced by ion beam mixing using Si+, Ar+, and Ge+ beams at room temperature. A 2.3-MeV He+ backscattering measurement showed that an alloyed layer was formed at the Pt/GaAs interface when these ions were implanted through Pt into GaAs, and that the thickness of the layer was proportional to the mass of the incident ion for a constant dose. Ohmic contacts were realized utilizing Si+ ion beam mixing in the Pt/GaAs system.