JOURNAL ARTICLE
High-voltage buried-channel MOS fabricated by oxygen implantation into silicon
Masahiro AkiyaK. OhwadaSatοru Nakashima
Year: 1981 Journal: Electronics Letters Vol: 17 (18)Pages: 640-641 Publisher: Institution of Engineering and Technology
Abstract
A high-voltage offset-gate buried-channel MOS made on a SOS-like substrate is described. An isolation layer is formed by an oxygen implantation process called SIMOX. A 410 V buried SiO2 breakdown voltage and a 180 V drain breakdown voltage are obtained.
Keywords:
Materials science Optoelectronics Voltage Silicon Electrical engineering Breakdown voltage Substrate (aquarium) Channel (broadcasting) Layer (electronics) Ion implantation Threshold voltage Transistor Nanotechnology Engineering Chemistry Ion
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8
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3.51
FWCI (Field Weighted Citation Impact)
1
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0.93
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Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences → Engineering → Electrical and Electronic Engineering
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