JOURNAL ARTICLE

High-Quality SOI by Oxygen Implantation into Silicon

Keywords:
Materials science Annealing (glass) Silicon on insulator Silicon Dislocation Climb Oxygen Oxide Crystallography Superlattice Condensed matter physics Metallurgy Composite material Optoelectronics Chemistry

Metrics

3
Cited By
0.91
FWCI (Field Weighted Citation Impact)
7
Refs
0.75
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

Related Documents

JOURNAL ARTICLE

High-voltage buried-channel MOS fabricated by oxygen implantation into silicon

Masahiro AkiyaK. OhwadaSatοru Nakashima

Journal:   Electronics Letters Year: 1981 Vol: 17 (18)Pages: 640-641
JOURNAL ARTICLE

Double SIMOX Structures Formed by Sequential High Energy Oxygen Implantation into Silicon

N. HatzopoulosW. SkorupaD. Siapkas

Journal:   Journal of The Electrochemical Society Year: 2000 Vol: 147 (1)Pages: 354-354
JOURNAL ARTICLE

SiO bond formation by oxygen implantation into silicon

Kenji KajiyamaTomoaki YonedaYuji FUJIOKAYoshiaki Kido

Journal:   Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Year: 1997 Vol: 121 (1-4)Pages: 315-318
© 2026 ScienceGate Book Chapters — All rights reserved.