Properties of SOI structures formed by high dose oxygen implantation into silicon

Dian-Tong Lu; Lu Wuxing; Zhong-Lie Wang; Du Yongchang; Zheng Huaide; Dang Mo; Zhongning Liang

doi:10.1016/0042-207x(89)90202-9

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Properties of SOI structures formed by high dose oxygen implantation into silicon

Dian-Tong Lu Lu Wuxing Zhong-Lie Wang Du Yongchang Zheng Huaide Dang Mo Zhongning Liang

Year: 1989 Journal: Vacuum Vol: 39 (2-4)Pages: 219-221 Publisher: Elsevier BV

DOI: 10.1016/0042-207x(89)90202-9

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Keywords:

Silicon on insulator Silicon Materials science Infrared spectroscopy Annealing (glass) Absorption spectroscopy Spreading resistance profiling Spectroscopy Infrared Analytical Chemistry (journal) Absorption (acoustics) Oxygen Optoelectronics Optics Chemistry Composite material

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Properties of SOI structures formed by high dose oxygen implantation into silicon

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