JOURNAL ARTICLE
Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
Year: 1984 Journal: Microelectronics Reliability Vol: 24 (5)Pages: 1004-1004 Publisher: Elsevier BV
Keywords:
Silicon Oxygen Materials science Radiochemistry Chemical engineering Chemistry Optoelectronics Engineering Organic chemistry
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0.48
FWCI (Field Weighted Citation Impact)
0
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0.74
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Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences → Materials Science → Materials Chemistry
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