XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon

JOURNAL ARTICLE

Year: 1983 Journal: physica status solidi (a) Vol: 76 (1)Pages: K21-K24 Publisher: Wiley

DOI: 10.1002/pssa.2210760153

Keywords:

Schulze method X-ray photoelectron spectroscopy Physics Materials science Philosophy Nuclear magnetic resonance

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1.93

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0.87

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics