JOURNAL ARTICLE
Properties of SiO2 films formed by oxygen implantation into silicon
K. I. KirovE. D. AtanasovaSilvia AlexandrovaB. AmovA. Djakov
Year: 1978 Journal: Thin Solid Films Vol: 48 (2)Pages: 187-192 Publisher: Elsevier BV
Keywords:
Annealing (glass) Analytical Chemistry (journal) Ion Hydrogen Oxygen Silicon Materials science Stoichiometry Ion implantation Nitrogen Chemistry Physical chemistry Optoelectronics
Metrics
15
Cited By
0.55
FWCI (Field Weighted Citation Impact)
10
Refs
0.68
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Ion-surface interactions and analysis
Physical Sciences → Engineering → Computational Mechanics
Silicon Nanostructures and Photoluminescence
Physical Sciences → Materials Science → Materials Chemistry
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Related Documents
BOOK-CHAPTER
XPS Studies of SiO2 Surface Layers Formed by Oxygen Ion Implantation into Silicon
U. KreissigW. SkorupaE. HenselJ. FinsterD. Schulze
Year: 1963 Pages: 423-426
JOURNAL ARTICLE
XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon
Dietmar SchulzeJ. FinsterEdward HenselW. SkorupaU. Kreißig
Journal: physica status solidi (a) Year: 1983 Vol: 76 (1)Pages: K21-K24
JOURNAL ARTICLE
The dielectric breakdown properties and I–V characteristics of thin SiO2 films formed by high dose oxygen ion implantation into silicon
Journal: Thin Solid Films Year: 1977 Vol: 42 (2)Pages: 227-235
JOURNAL ARTICLE
Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
P.L.F. HemmentE.A. Maydell-OndruszKG StevensJohn A. KilnerJ.B. Butcher
Journal: Vacuum Year: 1984 Vol: 34 (1-2)Pages: 203-208
JOURNAL ARTICLE
Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon
Journal: Microelectronics Reliability Year: 1984 Vol: 24 (5)Pages: 1004-1004