Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

P.L.F. Hemment; E.A. Maydell-Ondrusz; KG Stevens; John A. Kilner; J.B. Butcher

doi:10.1016/0042-207x(84)90128-3

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Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

P.L.F. Hemment E.A. Maydell-Ondrusz KG Stevens John A. Kilner J.B. Butcher

Year: 1984 Journal: Vacuum Vol: 34 (1-2)Pages: 203-208 Publisher: Elsevier BV

DOI: 10.1016/0042-207x(84)90128-3

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Keywords:

Silicon on insulator Wafer Silicon Materials science Oxygen Ion implantation Stoichiometry Layer (electronics) Fabrication Thermal oxidation Dielectric Analytical Chemistry (journal) Optoelectronics Ion Nanotechnology Chemistry Physical chemistry

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Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

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