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Recombination of charge carriers in buried layers formed by high energy oxygen or carbon implantation into silicon

Stéphane BogenL. FreyM. HerdenH. Ryssel

Year: 1996 Ion Beam Modification of Materials Pages: 916-919
DOI: 10.1016/b978-0-444-82334-2.50181-7
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Keywords:
Silicon Charge carrier Oxygen Carbon fibers Materials science Charge (physics) Optoelectronics Recombination Chemical physics Engineering physics Chemistry Physics Composite material

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Topics

Radiation Effects in Electronics
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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