Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon

Stéphane Bogen; M. Herden; L. Frey; H. Ryssel

doi:10.1109/iit.1996.586578

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Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon

Stéphane Bogen M. Herden L. Frey H. Ryssel

Year: 2002 Vol: 23 Pages: 792-795

DOI: 10.1109/iit.1996.586578

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Abstract

S.792

Keywords:

Silicon Materials science Annealing (glass) Recombination Optoelectronics Ion implantation Diffusion Current (fluid) Oxygen Bipolar junction transistor Transistor Electrical engineering Chemistry Composite material Voltage Physics Ion

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Radiation Effects in Electronics

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon

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