Buried Silicon-Nitride Layers Formed by Nitrogen-Ion Implantation and High-Temperature Annealing

G. Zimmer; W. Zetzmann; Zhongliu Liu; E. Neubert

doi:10.1007/978-3-642-69156-0_47

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Buried Silicon-Nitride Layers Formed by Nitrogen-Ion Implantation and High-Temperature Annealing

G. Zimmer W. Zetzmann Zhongliu Liu E. Neubert

Year: 1983 Pages: 426-432

DOI: 10.1007/978-3-642-69156-0_47

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Keywords:

Materials science Ion implantation Optoelectronics Annealing (glass) Epitaxy Silicon on insulator Silicon Dielectric Oxide Nitride Silicon nitride Integrated circuit Nanotechnology Ion Layer (electronics) Chemistry Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Buried Silicon-Nitride Layers Formed by Nitrogen-Ion Implantation and High-Temperature Annealing

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