Characterization of buried silicon-nitride formed by nitrogen implantation

Jürgen Belz; E.H. Te Kaat; G. Zimmer; H. Vogt

doi:10.1016/s0168-583x(87)80057-5

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Characterization of buried silicon-nitride formed by nitrogen implantation

Jürgen Belz E.H. Te Kaat G. Zimmer H. Vogt

Year: 1987 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 19-20 Pages: 279-284 Publisher: Elsevier BV

DOI: 10.1016/s0168-583x(87)80057-5

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Keywords:

Materials science Nucleation Silicon Silicon nitride Crystallization Annealing (glass) Epitaxy Nitride Amorphous solid Nitrogen Crystallography Analytical Chemistry (journal) Metallurgy Layer (electronics) Chemical engineering Composite material Chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Characterization of buried silicon-nitride formed by nitrogen implantation

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