Microstructure of buried nitride films in silicon formed by implanted nitrogen

Abstract

High fluence ion implantation of nitrogen ions in silicon is currently of great interest in the formation of silicon on insulator (SOI) structures. After ion implantation, the single crystal silicon water usually exhibits a highly defective surface layer followed by an amorphous layer corresponding to the peak of the nitrogen implant profile. Annealing the sample at ∽ 1200 C yields a buried layer of silicon nitride underneath a top layer of single crystal silicon. The Quality of the single crystal silicon, buried nitride and the silicon/silicon nitride interface is of paramount importance from the standpoint of device design. We have used high resolution cross section TEM to examine the Si/nitride interface and the buried nitride layer.