Ion-implanted buried nitride layers in silicon

Rune Olofsson; G. Holmén

doi:10.1016/0921-5107(92)90279-i

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Ion-implanted buried nitride layers in silicon

Rune Olofsson G. Holmén

Year: 1992 Journal: Materials Science and Engineering B Vol: 12 (1-2)Pages: 161-164 Publisher: Elsevier BV

DOI: 10.1016/0921-5107(92)90279-i

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Keywords:

Annealing (glass) Materials science Nitride Silicon nitride Electrical resistivity and conductivity Ion Amorphous solid Silicon Dielectric Ion implantation Layer (electronics) Optoelectronics Analytical Chemistry (journal) Composite material Crystallography Chemistry Electrical engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Ion-implanted buried nitride layers in silicon

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