Buried layers of silicon oxy-nitride fabricated using ion beam synthesis

K.J. Reeson; P.L.F. Hemment; C. D. Meekison; Christopher Marsh; G. R. Booker; Richard J. Chater; John A. Kilner; J.R. Davis

doi:10.1016/0168-583x(88)90250-9

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Buried layers of silicon oxy-nitride fabricated using ion beam synthesis

K.J. Reeson P.L.F. Hemment C. D. Meekison Christopher Marsh G. R. Booker Richard J. Chater John A. Kilner J.R. Davis

Year: 1988 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 32 (1-4)Pages: 427-432 Publisher: Elsevier BV

DOI: 10.1016/0168-583x(88)90250-9

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Keywords:

Overlayer Impurity Silicon Materials science Crystallinity Oxygen Annealing (glass) Ion Silicon nitride Nitrogen Nitride Ion implantation Redistribution (election) Analytical Chemistry (journal) Crystallography Nanotechnology Layer (electronics) Optoelectronics Chemistry Metallurgy Composite material Physical chemistry

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Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Buried layers of silicon oxy-nitride fabricated using ion beam synthesis

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