Infrared analysis of buried insulator layers formed by ion implantation into silicon

Josep Samitier; S. Martı́nez; Ahmed El Hassani; A. Pérez‐Rodríguez; J.R. Morante

doi:10.1016/0169-4332(93)90113-p

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Infrared analysis of buried insulator layers formed by ion implantation into silicon

Josep Samitier S. Martı́nez Ahmed El Hassani A. Pérez‐Rodríguez J.R. Morante

Year: 1993 Journal: Applied Surface Science Vol: 63 (1-4)Pages: 312-315 Publisher: Elsevier BV

DOI: 10.1016/0169-4332(93)90113-p

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Keywords:

Silicon Silicon on insulator Infrared Ion implantation Materials science Ion Optoelectronics Insulator (electricity) Nanotechnology Chemistry Optics Physics

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Infrared analysis of buried insulator layers formed by ion implantation into silicon

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