JOURNAL ARTICLE
RBS/Simulated annealing analysis of buried SiCO layers formed by implantation of O into cubic silicon carbide
N.P. BarradasC. JeynesS.M. Jackson
Year: 1998 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 136-138 Pages: 1168-1171 Publisher: Elsevier BV
Keywords:
Annealing (glass) Stoichiometry Silicon carbide Materials science Silicon Scattering Analytical Chemistry (journal) Ion implantation Carbide Oxygen Spectral line Crystallography Molecular physics Metallurgy Ion Chemistry Physical chemistry Optics Physics
Metrics
41
Cited By
6.65
FWCI (Field Weighted Citation Impact)
10
Refs
0.98
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon Carbide Semiconductor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Thin-Film Transistor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
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