E'1 centres in buried oxide layers formed by oxygen ion implantation into silicon

R.C. Barklie; T.J. Ennis; K.J. Reeson; P.L.F. Hemment

doi:10.1016/0168-583x(92)95019-n

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E'1 centres in buried oxide layers formed by oxygen ion implantation into silicon

R.C. Barklie T.J. Ennis K.J. Reeson P.L.F. Hemment

Year: 1992 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 65 (1-4)Pages: 93-96 Publisher: Elsevier BV

DOI: 10.1016/0168-583x(92)95019-n

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Keywords:

Annealing (glass) Oxide Ion implantation Wafer Materials science Silicon Ion Electron paramagnetic resonance Atmospheric temperature range Analytical Chemistry (journal) Optoelectronics Metallurgy Chemistry Nuclear magnetic resonance

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

E'1 centres in buried oxide layers formed by oxygen ion implantation into silicon

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