CHARACTERISTIC ELECTRON ENERGY LOSS SPECTRA IN SiC BURIED LAYERS FORMED BY C+ IMPLANTATION INTO CRYSTALLINE SILICON
Hui YanGuanghua ChenS. P. WongR. W. M. Kwok(1)北京工业大学应用物理系，北京 100022; (2)香港中文大学电子工程系，香港沙田; (3)香港中文大学化学系，香港沙田
Abstract
SiC buried layers were snythesized by a metal vapor vacuum arc ion source,with C+ ions implanted into crystalline Si substrates.According to X-ray photoelectron spectroscopy,the characteristic electron energy loss spectra of the SiC buried layers were studied.It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content,and correlate well with the order of the buried layers.
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