JOURNAL ARTICLE
C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into silicon
K. IzumiM. DokenHisashi Ariyoshi
Year: 1978 Journal: Electronics Letters Vol: 14 (18)Pages: 593-594 Publisher: Institution of Engineering and Technology
Abstract
Buried SiO2, layers were formed by oxygen-ion (14O+) implantation into silicon. The impurity distribution of the oxygen-implanted silicon substrate was analysed by auger spectroscopy. The epitaxially-grown silicon layer on this substrate showed a good monocrystalline structure, and a 19-stage c.m.o.s. ring oscillator exhibited high performance in operation.
Keywords:
Silicon Monocrystalline silicon Substrate (aquarium) Materials science Oxygen Epitaxy Impurity Layer (electronics) Optoelectronics Auger electron spectroscopy Ion implantation Ion Nanotechnology Chemistry
Metrics
534
Cited By
3.63
FWCI (Field Weighted Citation Impact)
5
Refs
0.94
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Related Documents
JOURNAL ARTICLE
E'1 centres in buried oxide layers formed by oxygen ion implantation into silicon
R.C. BarklieT.J. EnnisK.J. ReesonP.L.F. Hemment
Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Year: 1992 Vol: 65 (1-4)Pages: 93-96
JOURNAL ARTICLE
High-voltage buried-channel MOS fabricated by oxygen implantation into silicon
Masahiro AkiyaK. OhwadaSatοru Nakashima
Journal: Electronics Letters Year: 1981 Vol: 17 (18)Pages: 640-641
JOURNAL ARTICLE
Electric-field-shielding layers formed by oxygen implantation into silicon
Satοru NakashimaMasahiro AkiyaKazutoshi Kato
Journal: Electronics Letters Year: 1983 Vol: 19 (15)Pages: 568-570
JOURNAL ARTICLE
Investigation of structure and composition of buried oxide layers formed by oxygen-ion implantation into silicon
Anirudh PatelA.D. YadavS. K. DubeyB.K. PanigrahiK.G.M. Nair
Journal: Radiation effects and defects in solids Year: 2009 Vol: 164 (1)Pages: 49-58
JOURNAL ARTICLE
Infrared analysis of buried insulator layers formed by ion implantation into silicon
Josep SamitierS. Martı́nezAhmed El HassaniA. Pérez‐RodríguezJ.R. Morante
Journal: Applied Surface Science Year: 1993 Vol: 63 (1-4)Pages: 312-315