Pattern profile control of polysilicon plasma etching

M. Kimizuka; Keiji Hirata

doi:10.1116/1.583203

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JOURNAL ARTICLE

Pattern profile control of polysilicon plasma etching

M. Kimizuka Keiji Hirata

Year: 1985 Journal: Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Vol: 3 (1)Pages: 16-19 Publisher: AIP Publishing

DOI: 10.1116/1.583203

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Abstract

Profile control in plasma etching of polysilicon is described. Reactive gases are CCl2F2–H2 and CCl2F2–C2H6. Undercutting suppression and sloped wall pattern profile without undercutting are realized. Thin film formation on the etched pattern side wall is observed. These characteristics are explained by the plasma polymerization phenomena which occurs competitively with etching reaction.

Keywords:

Etching (microfabrication) Reactive-ion etching Plasma etching Materials science Plasma Dry etching Optoelectronics Composite material Layer (electronics)

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Topics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Pattern profile control of polysilicon plasma etching

Abstract

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