Properties of Transparent Conducting ATO Films Deposited by RF Magnetron Sputtering

Abstract

We have discussed the effects of substrate temperature and Sb2O3 composition on properties of ATO thin films by RF magnetron sputtering. Above 250°C of substrate temperature, the films exhibited good crystallographic and electrical properties. At fixed substrate temperature of 250°C, the electrical properties of ATO film were enhanced with increasing Sb concentration. From the AES depth profile and XRD pattern for the film with 92:8 of SnO2:Sb2O3 composition, we found that Sb was uniform and there was no secondary phase or phase separation in ATO film. The rms roughness of the films was minimum value, 1.54 nm, at the composition of 92:8 wt%. For the ATO thin film with 92:8 composition exhibited good chemical endurance and thermal stability, which seems to be good for touch panel applications.