Analysis of buried layers from high dose oxygen ion implantation

S.N. Bunker; P. Sioshansi; M.M. Sanfacon; A. Mogro‐Campero; Gabriel Smith

doi:10.1016/0168-583x(87)90814-7

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JOURNAL ARTICLE

Analysis of buried layers from high dose oxygen ion implantation

S.N. Bunker P. Sioshansi M.M. Sanfacon A. Mogro‐Campero Gabriel Smith

Year: 1987 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 21 (1-4)Pages: 148-150 Publisher: Elsevier BV

DOI: 10.1016/0168-583x(87)90814-7

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Keywords:

Materials science Silicon Impurity Wafer Reflectometry Ion implantation Analytical Chemistry (journal) Oxygen Secondary ion mass spectrometry Ion Spreading resistance profiling Copper Optoelectronics Chemistry Metallurgy

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Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Analysis of buried layers from high dose oxygen ion implantation

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