C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation

F.T. Brady; S. S. Li; W. Krull

doi:10.1007/bf02657987

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C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation

F.T. Brady S. S. Li W. Krull

Year: 1989 Journal: Journal of Electronic Materials Vol: 18 (3)Pages: 385-389 Publisher: Springer Science+Business Media

DOI: 10.1007/bf02657987

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Keywords:

Oxide Wafer Materials science Annealing (glass) Optoelectronics Silicon Oxygen Layer (electronics) Silicon on insulator Equivalent oxide thickness Substrate (aquarium) Capacitor Thin film Gate oxide Analytical Chemistry (journal) Voltage Chemistry Nanotechnology Electrical engineering Composite material Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation

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