JOURNAL ARTICLE
Formation of buried insulating layers by high dose oxygen implantation under controlled temperature conditions
M. BruelJ. MargailJ. StoëmenosP. MartínC. Jaussaud
Year: 1985 Journal: Vacuum Vol: 35 (12)Pages: 589-593 Publisher: Elsevier BV
Keywords:
Materials science Wafer Annealing (glass) Silicon Silicon on insulator Epitaxy Tin Layer (electronics) Oxygen Optoelectronics Composite material Metallurgy Chemistry
Metrics
15
Cited By
3.25
FWCI (Field Weighted Citation Impact)
12
Refs
0.92
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences → Engineering → Electrical and Electronic Engineering
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