JOURNAL ARTICLE

Formation of buried oxide layers by high dose implantation of oxygen ions in silicon

K. DasJ.B. ButcherK.V. Anand

Year: 1984 Journal:   Journal of Electronic Materials Vol: 13 (4)Pages: 635-654   Publisher: Springer Science+Business Media
Keywords:
Oxide Oxygen Stoichiometry Silicon Ion implantation Materials science Analytical Chemistry (journal) Ion Substrate (aquarium) Silicon dioxide Limiting oxygen concentration Layer (electronics) Inorganic chemistry Chemistry Nanotechnology Composite material Metallurgy Physical chemistry

Metrics

4
Cited By
1.44
FWCI (Field Weighted Citation Impact)
21
Refs
0.84
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences →  Materials Science →  Materials Chemistry

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