Formation of buried oxide layers by high dose implantation of oxygen ions in silicon

K. Das; J.B. Butcher; K.V. Anand

doi:10.1007/bf02653986

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Formation of buried oxide layers by high dose implantation of oxygen ions in silicon

K. Das J.B. Butcher K.V. Anand

Year: 1984 Journal: Journal of Electronic Materials Vol: 13 (4)Pages: 635-654 Publisher: Springer Science+Business Media

DOI: 10.1007/bf02653986

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Keywords:

Oxide Oxygen Stoichiometry Silicon Ion implantation Materials science Analytical Chemistry (journal) Ion Substrate (aquarium) Silicon dioxide Limiting oxygen concentration Layer (electronics) Inorganic chemistry Chemistry Nanotechnology Composite material Metallurgy Physical chemistry

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0.84

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Topics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Formation of buried oxide layers by high dose implantation of oxygen ions in silicon

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