JOURNAL ARTICLE

Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

G. K. CellerAlice E. White

Year: 1992 Journal:   MRS Bulletin Vol: 17 (6)Pages: 40-46   Publisher: Springer Nature
Keywords:
Ion implantation Silicide Materials science Silicon Doping Oxide Ion Optoelectronics Ion beam Semiconductor Substrate (aquarium) Engineering physics Nanotechnology Chemistry Physics Metallurgy

Metrics

18
Cited By
4.40
FWCI (Field Weighted Citation Impact)
39
Refs
0.95
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Ion-surface interactions and analysis
Physical Sciences →  Engineering →  Computational Mechanics
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

Related Documents

JOURNAL ARTICLE

Formation of buried iron-cobalt-silicide layers by high dose implantation

D. PankninE. WieserW. SkorupaH. VöhseJ. Albrecht

Journal:   Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Year: 1993 Vol: 74 (1-2)Pages: 213-217
JOURNAL ARTICLE

Formation of buried oxide layers by high dose implantation of oxygen ions in silicon

K. DasJ.B. ButcherK.V. Anand

Journal:   Journal of Electronic Materials Year: 1984 Vol: 13 (4)Pages: 635-654
JOURNAL ARTICLE

Buried oxide formation in Si by high-dose implantation of oxygen

A. H. van OmmenM. P. A. Viegers

Journal:   Applied Surface Science Year: 1987 Vol: 30 (1-4)Pages: 383-389
© 2026 ScienceGate Book Chapters — All rights reserved.