Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs

G. Patriarche; J.P. Rivière; J. Castaing

doi:10.1051/jp3:1993193

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Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs

G. Patriarche J.P. Rivière J. Castaing

Year: 1993 Journal: Journal de Physique III Vol: 3 (6)Pages: 1189-1199 Publisher: EDP Sciences

DOI: 10.1051/jp3:1993193

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Abstract

Rksumk.Nous proposons un mdcanisme de germination et de ddveloppement des dislocations permettant de compenser l'dcart de parambtres d'une couche dpitaxi£e sur un substrat, par exemple dans notre cas, un compost II-VI sur GaAs.On porte une attention particulibre aux dislocations rdsiduelles dans la couche dont on cherche h minimiser la densitd.

Keywords:

Epitaxy Nucleation Materials science Layer (electronics) Condensed matter physics Semiconductor Dislocation Substrate (aquarium) Crystallography Optoelectronics Chemistry Nanotechnology Composite material Physics Geology

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs

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