Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: \nII-VI compounds on GaAs

Abstract

\nWe suggest a model for the nucleation and expansion of dislocations which accommodate \nthe parameter misfit of an epitaxial layer on a substrate, applied, in this work, \nto a II-VI compound on GaAs. We examine in particular the dislocations threading \nthrough the layer, which must be kept as low as possible in density.\n