JOURNAL ARTICLE
Misfit Dislocations at II-VI/GaAs Interfaces
Year: 1990 Journal: MRS Proceedings Vol: 183 Publisher: Cambridge University Press
Keywords:
Materials science Partial dislocations Crystallography Cadmium telluride photovoltaics Heterojunction Condensed matter physics Dislocation Annealing (glass) Lattice (music) Dissociation (chemistry) Optoelectronics Composite material Chemistry Physical chemistry
Metrics
6
Cited By
0.86
FWCI (Field Weighted Citation Impact)
10
Refs
0.79
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
Chalcogenide Semiconductor Thin Films
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Related Documents
JOURNAL ARTICLE
Characterization of Misfit Dislocations at Heterovalent II-VI/III-V Interfaces
B.S. McKeonXiaojuan LiuJ. K. FurdynaDavid J. Smith
Journal: Microscopy and Microanalysis Year: 2019 Vol: 25 (S2)Pages: 2610-2611
JOURNAL ARTICLE
The Interactions Between Misfit Dislocations in InGaAs/GaAs Interfaces.
P. KightleyP.J. GoodhewRichard Beanland
Journal: MRS Proceedings Year: 1991 Vol: 239
JOURNAL ARTICLE
Interactions of misfit dislocations in InxGa1-xAs/GaAs interfaces
Alain LefebvreC. HerbeauxJ. Di Persio
Journal: Philosophical Magazine A Year: 1991 Vol: 63 (3)Pages: 471-485
JOURNAL ARTICLE
Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces
J. M. WoodallG. D. PettitThomas N. JacksonC. LanzaK. L. KavanaghJ. W. Mayer
Journal: Physical Review Letters Year: 1983 Vol: 51 (19)Pages: 1783-1786
JOURNAL ARTICLE
Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs
G. PatriarcheJ.P. RivièreJ. Castaing
Journal: Journal de Physique III Year: 1993 Vol: 3 (6)Pages: 1189-1199