Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substrates

W. Bartels; W. Nijman

doi:10.1016/0022-0248(77)90115-4

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Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substrates

W. Bartels W. Nijman

Year: 1977 Journal: Journal of Crystal Growth Vol: 37 (3)Pages: 204-214 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(77)90115-4

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Keywords:

Epitaxy Burgers vector Perpendicular Condensed matter physics Asymmetry Materials science Dislocation Enhanced Data Rates for GSM Evolution Plane (geometry) Partial dislocations Thin film Etching (microfabrication) Crystallography Optics Geometry Layer (electronics) Physics Chemistry Composite material Nanotechnology Mathematics

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Advanced Materials and Mechanics

Physical Sciences → Engineering → Mechanical Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chemical and Physical Properties of Materials

Physical Sciences → Materials Science → Materials Chemistry

Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substrates

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