JOURNAL ARTICLE

Monolithically integrated 40-Gb/s InP/InGaAs PIN/HBT optical receiver module

Abstract

A fully packaged 40 Gb/s optical receiver module based on monolithic integration of pin photodiodes and single-heterojunction bipolar transistors (HBT) in the InP/InGaAs material system is presented. Combined with an electrical broad-band mounting technique the optical receiver module achieved an overall conversion gain of 48 V/W and showed clearly open eyes at a data-rate of 40 Gb/s and a wavelength of 1550 nm.

Keywords:
Heterojunction bipolar transistor Photodiode Optoelectronics Indium gallium arsenide Materials science Gallium arsenide Indium phosphide Bipolar junction transistor Heterojunction Electrical engineering Transistor Engineering Voltage

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Topics

Photonic and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advanced Photonic Communication Systems
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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