JOURNAL ARTICLE
18 GHz high gain monolithically integrated InP/InGaAs PIN/HBT-Receiver
D. HuberM. BitterR. BauknechtT. MorfC. BergamaschiH. Jäckel
Year: 1997 Journal: European Solid-State Device Research Conference Pages: 292-295
Keywords:
Heterojunction bipolar transistor Gallium arsenide Optoelectronics Materials science Indium phosphide Indium gallium arsenide Electrical engineering Transistor Bipolar junction transistor Engineering Voltage
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3
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0.05
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Citation History
Topics
Radio Frequency Integrated Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advanced Photonic Communication Systems
Physical Sciences → Engineering → Electrical and Electronic Engineering
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